Areas of Application

• Redistribution layers (RDL) for opto- and microelectronics

• Solder, Cu and Au bumps & UBM for backend device manufacturing

• Functional metallic layers for MEMS

• Interconnections as Cu pillars, TSVs for packaging

• Blind vias

• Micro forming and moulding for microsystems

Features and benefits

Process stability & control

• Control of uniformity

• Electrolyte booster for lifetime enhancement

• pH-control

• Automated dosage

• Logging of process parameters

Operator & service safety

• Good accessibility

• Easy maintenance

• Drag out rinse included in plating process module

Flexibility

• Different substrate sizes

• Adjustable wafer thickness

• Wide range of materials

• Flexible recipe management

High quality plating performance

• Inert or soluble anode

• DC or forward/reverse pulse plating

• Edge exclusion: < 3mm

• 360° Ti contact pin arrays

Technical Data

Dimensions 600 x 1600 x 2050 mm per module (length x width x height)

Wafer thickness 350 - 1000 μm

Wafer size 4“ - 12“ wafer

Wafer material Si, SiC, InP, SiGe, glass, sapphire, ceramic, GaN, GaAs, etc.

Plating material Pure metals: Cu, Au, Ni, In, Sn, Pt

Alloys: SnAg, PbSn, FeNi

Facility requirements

Electricity 380-400V / 50-60Hz / 32A

Exhaust max. 500 m3/h per module

Compressed dry air for pneumatics

Optional

SECS / GEM

Large HMI Touch-Panel

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